N₂Zn₁Ba₂ is an experimental semiconductor compound combining zinc and barium nitride phases, representing research into multi-element nitride systems for advanced optoelectronic and functional material applications. This material belongs to the wide-bandgap nitride family, which is of interest for UV-responsive devices, high-temperature electronics, and specialized photonic components where conventional semiconductors reach their limits. The specific composition suggests investigation into ternary nitride phases that may offer tunable electronic properties or unique crystal structures not achievable in binary nitride systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 58.99 | GPa | — | ||
Shear Modulus(G) | 28.21 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2710 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6060 | eV/atom | — |