N2 Sr1 Hf1

semiconductor

· N2 Sr1 Hf1

N₂Sr₁Hf₁ is an experimental nitride semiconductor compound combining strontium and hafnium in a nitrogen-based matrix. This material belongs to the emerging family of wide-bandgap nitride semiconductors, which are of significant research interest for high-temperature, high-power, and high-frequency electronic applications where conventional semiconductors reach their limits. While not yet established in mainstream production, nitride-based semiconductors in this compositional space are being investigated for next-generation power devices, RF circuits, and radiation-hardened electronics that demand stability beyond the capabilities of traditional gallium nitride or silicon carbide platforms.

experimental semiconductor researchwide-bandgap device developmenthigh-temperature electronicsradiation-hardened circuitshigh-power RF applicationsnext-generation power devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	23,986.1	ksi	—
Shear Modulus(G)	17,565.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1624	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.620	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N2 Sr1 Hf1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control