N₂Sr₁Hf₁ is an experimental nitride semiconductor compound combining strontium and hafnium in a nitrogen-based matrix. This material belongs to the emerging family of wide-bandgap nitride semiconductors, which are of significant research interest for high-temperature, high-power, and high-frequency electronic applications where conventional semiconductors reach their limits. While not yet established in mainstream production, nitride-based semiconductors in this compositional space are being investigated for next-generation power devices, RF circuits, and radiation-hardened electronics that demand stability beyond the capabilities of traditional gallium nitride or silicon carbide platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,986.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 17,565.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1624 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.620 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data