Rb₂N₂O₆ is an inorganic compound combining rubidium, nitrogen, and oxygen in a specific stoichiometric ratio, classified as a semiconductor material. This is primarily a research-phase compound studied for its electronic and structural properties rather than an established commercial material. The material belongs to the broader family of metal nitrate and oxide compounds, with potential applications in solid-state electronics, advanced ceramics, and energy storage systems where rubidium-containing phases can offer unique ionic conductivity or catalytic benefits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,126.4 | ksi | — | ||
Shear Modulus(G) | 1,011.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.042 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.015 | eV/atom | — |