N1 Yb1 is a ytterbium-containing semiconductor compound, likely a rare-earth doped or ytterbium-based binary system developed for specialized optoelectronic or photonic applications. This material represents experimental or emerging research in the rare-earth semiconductor family, where ytterbium doping or incorporation is used to modify electronic band structure, luminescence properties, or quantum efficiency for infrared photonics, laser gain media, or high-performance detector systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,127.4 | ksi | — | ||
Shear Modulus(G) | 5,865.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7900 | eV/atom | — |