N1 O3 Ag1

semiconductor

· N1 O3 Ag1

N₁O₃Ag₁ is an experimental semiconductor compound combining silver with nitrogen and oxygen, belonging to the family of mixed-metal oxide-nitride materials. This composition represents early-stage research into ternary semiconductor systems that could offer unique electronic or photonic properties distinct from binary oxides or nitrides. While not established in commercial production, materials in this chemical family are of interest for optoelectronic devices, photocatalysis, and sensing applications where novel band structure engineering may provide advantages over conventional semiconductors.

photocatalytic water treatment (research)optoelectronic sensors (experimental)antimicrobial coatings (conceptual)next-generation semiconductors (lab-scale)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	46.48	GPa	—
Shear Modulus(G)	9.507	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2520	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N1 O3 Ag1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control