N1O2Ag1 is an experimental semiconductor compound combining nitrogen, oxygen, and silver in a 1:2:1 stoichiometric ratio. This material represents research into mixed-metal oxide semiconductors with potential photocatalytic or optoelectronic properties, leveraging silver's conductivity in an oxide matrix. While not yet established in mainstream industrial production, compounds of this family are investigated for applications requiring tunable bandgaps, visible-light activity, or enhanced charge carrier transport compared to conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,531.5 | ksi | — | ||
Shear Modulus(G) | 1,923.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.271 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1610 | eV/atom | — |