N1 Hf1 is a hafnium-based semiconductor compound, likely a binary or ternary phase combining hafnium with nitrogen and possibly one additional element. This material family is primarily of research interest, investigated for next-generation microelectronic and high-temperature semiconductor applications where hafnium's high refractory character and wide bandgap potential offer advantages over conventional silicon-based devices. Hafnium nitrides and related compounds are explored for their thermal stability, chemical inertness, and potential use in extreme environment electronics, though most formulations remain in development rather than high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40,272.2 | ksi | — | ||
Shear Modulus(G) | 24,206.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.925 | eV/atom | — |