N1 Er1 is a semiconductor compound in the erbium-based material family, likely an erbium nitride or erbium-containing intermetallic phase. This material belongs to the broader class of rare-earth semiconductors being investigated for advanced optoelectronic and photonic applications. Erbium-based semiconductors are of particular interest in telecommunications and quantum technologies due to erbium's characteristic emission wavelengths and potential for optical integration, though commercial deployment remains limited compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 179.0 | GPa | — | ||
Shear Modulus(G) | 137.9 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3378 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.011 | eV/atom | — |