N1 Ba2

semiconductor

· N1 Ba2

N1 Ba2 is a barium-containing semiconductor compound, likely a barium nitride or barium-based intermetallic semiconductor phase. This material belongs to the family of wide-bandgap or emerging semiconductors that are primarily explored in research contexts for next-generation electronic and optoelectronic applications. Its adoption in industry remains limited, with most development focused on fundamental studies of thermal stability, electrical conductivity, and potential device integration rather than widespread commercial manufacturing.

Research semiconductorsWide-bandgap device developmentHigh-temperature electronicsOptoelectronic prototypingAdvanced material screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02710	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5530	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N1 Ba2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control