MoSe2

Name: MoSe2
Brand: MatWorld

semiconductor

· MoSe2

Molybdenum diselenide (MoSe2) is a layered transition metal dichalcogenide semiconductor with a hexagonal crystal structure, belonging to the family of two-dimensional (2D) materials that can be exfoliated into atomically thin sheets. It is primarily investigated for next-generation electronics, photonics, and energy storage applications where its direct bandgap and strong light-matter interaction offer advantages over conventional silicon-based devices. MoSe2 is notable for enabling flexible electronics, high-sensitivity photodetectors, and catalytic surfaces for hydrogen evolution, with significant research momentum in monolayer and few-layer form factors where quantum confinement effects enhance performance relative to bulk alternatives.

2D semiconductor devicesflexible electronicsphotodetectors and image sensorscatalytic electrodes (hydrogen production)field-effect transistors (FETs)integrated photonics and optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	3,159.3	ksi	DFT
↳	8,399.1	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	80.24	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2700	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	2,233.6	ksi	DFT
↳	5,098.1	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2386	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	1.600	eV	Measured
↳	0.9060	eV	DFT · OptB88vdW
↳	1.323	eV	DFT · TBmBJ
↳	1.310	eV	DFT · HSE06
Dielectric Constant (Relative Permittivity)(εr)3 entries	17.44	-	DFT · OptB88vdW
↳	11.73	-	DFT · PBE
↳	13.65 range 13.44–13.86median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	15.32	-	DFT · OptB88vdW
↳	14.26	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.5333	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.8000	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00360	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00106	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-277.3	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	192	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.76	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00570	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6658	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MoSe2 — Properties & Data | MatWorld

MoSe2

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