MoSe2
semiconductorMolybdenum diselenide (MoSe2) is a layered transition metal dichalcogenide semiconductor with a hexagonal crystal structure, belonging to the family of two-dimensional (2D) materials that can be exfoliated into atomically thin sheets. It is primarily investigated for next-generation electronics, photonics, and energy storage applications where its direct bandgap and strong light-matter interaction offer advantages over conventional silicon-based devices. MoSe2 is notable for enabling flexible electronics, high-sensitivity photodetectors, and catalytic surfaces for hydrogen evolution, with significant research momentum in monolayer and few-layer form factors where quantum confinement effects enhance performance relative to bulk alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)3 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |