Molybdenum diselenide (MoSe2) is a layered transition metal dichalcogenide semiconductor with a hexagonal crystal structure, belonging to the family of two-dimensional (2D) materials that can be exfoliated into atomically thin sheets. It is primarily investigated for next-generation electronics, photonics, and energy storage applications where its direct bandgap and strong light-matter interaction offer advantages over conventional silicon-based devices. MoSe2 is notable for enabling flexible electronics, high-sensitivity photodetectors, and catalytic surfaces for hydrogen evolution, with significant research momentum in monolayer and few-layer form factors where quantum confinement effects enhance performance relative to bulk alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 21.78 | GPa | — | ||
| ↳ | 57.91 | GPa | — | ||
Exfoliation Energy(Eexf) | 80.24 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G)2 entries | 15.40 | GPa | — | ||
| ↳ | 35.15 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.605 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.600 | eV | — | ||
| ↳ | 0.9420 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.73 | - | — | ||
| ↳ | 17.44 | - | — | ||
| ↳ | 13.65 range 13.44–13.86median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -273.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00570 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6658 | eV/atom | — |