Mo8S7Te9 is a mixed-metal chalcogenide semiconductor compound combining molybdenum with sulfur and tellurium in a fixed stoichiometric ratio. This is a research-phase material being investigated for optoelectronic and photovoltaic applications, where the dual chalcogen composition (S and Te) offers tunable band gap and potential advantages over binary molybdenum chalcogenides in light absorption and charge transport. The material belongs to the broader family of layered transition metal dichalcogenides and related compounds, which show promise as thin-film absorbers and active layers in next-generation solar cells and photodetectors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8794 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5250 | eV/atom | — |