Mo8 S6 Te10

semiconductor

· Mo8 S6 Te10

Mo₈S₆Te₁₀ is a mixed-chalcogenide semiconductor compound combining molybdenum with sulfur and tellurium in a layered structure. This is a research-phase material explored for its potential in two-dimensional electronics, photocatalysis, and energy storage applications, where the combined chalcogenide chemistry offers tunable bandgap and charge-carrier properties distinct from binary molybdenum dichalcogenides (MoS₂ or MoTe₂). The ternary composition allows engineers to engineer electronic and optical properties for niche applications where standard transition metal dichalcogenides fall short, though industrial-scale synthesis and processing routes remain under development.

2D semiconductor devicesPhotocatalytic applicationsBattery electrodes (research)PhotodetectorsEnergy conversion (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7476 range 0.7442–0.7511median of 2 measurements	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo8 S6 Te10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control