Mo6S1Te11 is a mixed-metal chalcogenide semiconductor compound combining molybdenum with sulfur and tellurium in a layered structure. This is an experimental material primarily of research interest for exploring novel electronic and optoelectronic properties within the broader family of transition-metal dichalcogenides and their heterostructures. The material's potential lies in nanoelectronic and photonic device applications where the tunable band gap and layered geometry of chalcogenide semiconductors offer advantages over conventional silicon, though industrial deployment remains limited to specialized research prototypes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7222 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2910 | eV/atom | — |