Mo4As6 is a molybdenum arsenide compound semiconductor belonging to the metal chalcogenide/pnictide family, representing an emerging class of materials being studied for electronic and optoelectronic applications. This material is primarily in the research and development phase, with investigations focusing on its potential in next-generation semiconductors, two-dimensional electronics, and thermoelectric devices where the combination of transition metal and pnictide elements offers tunable band structures and novel electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2420 | eV/atom | — |