Mo₃W₁Se₂S₆ is a mixed transition metal chalcogenide semiconductor belonging to the layered dichalcogenide family, combining molybdenum, tungsten, selenium, and sulfur in a defined stoichiometry. This is primarily a research material investigated for its electronic and optoelectronic properties, offering tunable band gaps and enhanced carrier mobility compared to single-component dichalcogenides (MoS₂ or WS₂ alone). The alloying of Mo and W with mixed chalcogens (Se/S) is of interest in emerging applications requiring heterostructured two-dimensional materials with improved light absorption, charge transport, and catalytic activity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44.80 | GPa | — | ||
Shear Modulus(G) | 30.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7287 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9060 | eV/atom | — |