Mo₃Se₆ is a layered transition metal chalcogenide semiconductor composed of molybdenum and selenium, belonging to the family of two-dimensional materials studied for next-generation electronic and optoelectronic devices. This compound is primarily investigated in research settings for applications requiring tunable band gaps, direct bandgap properties, and anisotropic transport characteristics. Engineers consider Mo₃Se₆ and related molybdenum chalcogenides as potential alternatives to graphene and traditional semiconductors in flexible electronics, photodetectors, and energy storage devices where layered crystal structure and reduced dimensionality offer performance advantages over bulk materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,642.8 | ksi | — | ||
Shear Modulus(G) | 3,238.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.123 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6440 | eV/atom | — |