Mo3Se4S2 is a layered transition metal chalcogenide semiconductor combining molybdenum with mixed selenium and sulfur anions. This is an experimental research material belonging to the family of two-dimensional and quasi-2D semiconductors currently under investigation for optoelectronic and energy conversion applications. The mixed-anion composition offers a tunable electronic bandgap and potential for enhanced performance compared to single-chalcogenide counterparts (such as MoS2), making it of interest for photocatalysis, photodetection, and emerging quantum device platforms where bandgap engineering and anisotropic transport properties are valuable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,550.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | -717.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3821 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7490 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data