Mo₂W₂Se₆S₂ is a mixed-metal dichalcogenide semiconductor combining molybdenum, tungsten, selenium, and sulfur in a layered crystalline structure. This compound belongs to the family of transition metal dichalcogenides (TMDs), which are of significant research interest for next-generation optoelectronic and energy conversion devices. The material is primarily in experimental and developmental stages, with potential advantages over single-component TMDs (like MoS₂) due to band gap engineering and enhanced electronic properties achievable through elemental alloying.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,476 | ksi | — | ||
Shear Modulus(G) | 3,978.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2950 range 0.2950–0.2951median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6510 | eV/atom | — |