Mo₂W₂Se₄S₄ is a mixed-metal dichalcogenide semiconductor combining molybdenum and tungsten with selenium and sulfur anions. This is a research-stage layered material belonging to the transition metal dichalcogenide (TMD) family, engineered to combine properties of individual MoSe₂, MoS₂, WS₂, and WSe₂ phases. Such alloyed TMDs are investigated for applications requiring tunable bandgaps, enhanced charge carrier mobility, or modified optical/electronic response compared to single-metal dichalcogenides; potential uses span flexible electronics, photocatalysis, and energy storage where layer-dependent properties and heterostructure engineering are advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.34 | GPa | — | ||
Shear Modulus(G) | 45.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5983 range 0.5725–0.6242median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7450 range -0.7550–-0.7350median of 2 measurements | eV/atom | — |