Mo2 W2 Se2 S6
semiconductorMo₂W₂Se₂S₆ is a mixed-metal dichalcogenide semiconductor composed of molybdenum, tungsten, selenium, and sulfur in a layered structure. This is an experimental material in the 2D/transition-metal dichalcogenide (TMD) family, synthesized primarily for research into optoelectronic and energy-conversion applications where tunable bandgap and strong light-matter interaction are advantageous. The alloying of two metals (Mo and W) with two chalcogens (Se and S) allows researchers to engineer electronic properties beyond what single-phase materials like MoS₂ or WS₂ offer, making it relevant for emerging technologies in photovoltaics, photodetectors, and catalysis, though production and integration pathways remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |