Mo₂W₂S₈ is a mixed-metal dichalcogenide semiconductor combining molybdenum and tungsten with sulfur in a layered structure. This compound represents an emerging class of engineered heterostructures in transition metal dichalcogenide (TMD) research, designed to modulate electronic and optical properties beyond single-metal variants. Applications remain primarily in research and development contexts, targeting next-generation nanoelectronics, photocatalysis, and optoelectronic devices where the synergistic effects of dual transition metals offer tunable bandgap and enhanced charge carrier dynamics compared to MoS₂ or WS₂ alone.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 72.56 | GPa | — | ||
Shear Modulus(G) | 50.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7786 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9280 | eV/atom | — |