Mo₂W₁Se₄S₂ is a mixed-metal dichalcogenide semiconductor belonging to the transition metal chalcogenide family, combining molybdenum and tungsten with selenium and sulfur in a layered structure. This is a research-stage compound designed to exploit the electronic and optical properties of layered semiconductors, with potential applications in flexible electronics, photocatalysis, and 2D device engineering where tuning the bandgap and carrier mobility through elemental composition is a primary design goal. The mixed metal and chalcogenide chemistry allows researchers to optimize properties for specific optoelectronic or catalytic performance that single-component materials like MoS₂ or WS₂ cannot readily achieve.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.26 | GPa | — | ||
Shear Modulus(G) | 25.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5455 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7080 | eV/atom | — |