Mo2 W1 Se2 S4
semiconductorMo2W1Se2S4 is a mixed-metal dichalcogenide semiconductor composed of molybdenum, tungsten, selenium, and sulfur atoms in a layered crystal structure. This material belongs to the family of transition metal dichalcogenides (TMDs), which are primarily of research interest for next-generation optoelectronic and electronic devices due to their direct bandgap properties and strong light-matter interactions in monolayer and few-layer forms. The alloying of molybdenum with tungsten and mixing of chalcogens (Se and S) allows tuning of electronic bandgap and optical properties beyond what single-element TMDs offer, making this composition relevant for exploratory work in flexible electronics, photovoltaics, and 2D materials engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |