Mo2 W1 S6

semiconductor

· Mo2 W1 S6

Mo₂W₁S₆ is a mixed-metal dichalcogenide semiconductor composed of molybdenum, tungsten, and sulfur atoms in a layered crystal structure. This material belongs to the transition metal dichalcogenide (TMD) family and represents a research-stage compound designed to combine properties of molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂) through alloying. The tungsten doping of molybdenum sulfide can modify band gap, carrier mobility, and catalytic activity compared to pure phase materials, making it of interest for next-generation electronic and energy applications where tunable semiconductor properties are advantageous.

2D semiconductor devicescatalytic applications (HER/OER)thin-film transistorsoptoelectronic researchenergy storage electrodesflexible electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8768	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo2 W1 S6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control