Mo2S2Te2 is a mixed chalcogenide semiconductor compound combining molybdenum with sulfur and tellurium, belonging to the transition metal dichalcogenide (TMD) family. This material is primarily investigated in research contexts for optoelectronic and energy conversion applications, where the combination of sulfur and tellurium is explored to engineer bandgap properties and carrier transport characteristics that differ from single-chalcogenide alternatives like MoS2 or MoTe2. Its dual-chalcogenide composition offers potential for tuning electronic properties in two-dimensional device architectures, though industrial deployment remains limited pending further optimization and scalability development.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.71 range 53.79–56.72median of 3 measurements | GPa | — | ||
Shear Modulus(G) | 36.59 range 33.67–39.27median of 3 measurements | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2099 range 0.00170–0.6060median of 3 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5270 range -0.5470–-0.5200median of 3 measurements | eV/atom | — |