Mo2S1Te3 is a mixed transition metal chalcogenide semiconductor combining molybdenum with sulfur and tellurium. This is a research-phase material rather than an established engineering compound, belonging to the family of layered transition metal dichalcogenides (TMDs) and their mixed-anion variants, which show promise for optoelectronic and quantum device applications. The inclusion of tellurium alongside sulfur creates a tunable bandgap and modified electronic properties compared to pure MoS2, making it of interest for photovoltaic absorbers, photodetectors, and 2D electronics research where bandgap engineering is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,029.5 | ksi | — | ||
Shear Modulus(G) | 4,841.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1494 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3700 | eV/atom | — |