Mo2 S1 Te3

semiconductor

· Mo2 S1 Te3

Mo2S1Te3 is a mixed transition metal chalcogenide semiconductor combining molybdenum with sulfur and tellurium. This is a research-phase material rather than an established engineering compound, belonging to the family of layered transition metal dichalcogenides (TMDs) and their mixed-anion variants, which show promise for optoelectronic and quantum device applications. The inclusion of tellurium alongside sulfur creates a tunable bandgap and modified electronic properties compared to pure MoS2, making it of interest for photovoltaic absorbers, photodetectors, and 2D electronics research where bandgap engineering is critical.

photovoltaic research devicesphotodetector materials2D semiconductor electronicsoptoelectronic componentsbandgap-engineered semiconductorsmaterials research & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	48.47	GPa	—
Shear Modulus(G)	33.38	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1494	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo2 S1 Te3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control