Mo₁W₃Se₈ is a mixed-metal selenide semiconductor compound combining molybdenum and tungsten in a layered chalcogenide structure. This material belongs to the family of transition metal dichalcogenides and related compounds, which are actively researched for electronic and optoelectronic applications due to their tunable band gaps and two-dimensional properties. Engineers consider such materials for next-generation devices where traditional silicon approaches face limitations, particularly in applications requiring direct band gaps, light emission, or integration into flexible or van der Waals heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,128 | ksi | — | ||
Shear Modulus(G) | 3,796.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.067 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5560 | eV/atom | — |