Mo1W3Se2S6 is a mixed-metal dichalcogenide semiconductor compound combining molybdenum and tungsten with selenium and sulfur. This material belongs to the family of layered transition metal chalcogenides, which are primarily of research interest for exploring novel electronic and optoelectronic properties that differ from single-element 2D materials like MoS2 or WS2. The alloyed composition potentially offers tunable bandgap and enhanced performance compared to binary dichalcogenides, making it relevant for emerging device architectures, though it remains largely in the experimental phase with limited industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,027.2 | ksi | — | ||
Shear Modulus(G) | 4,544.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6885 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7940 | eV/atom | — |