Mo1W3S8 is a mixed-metal dichalcogenide semiconductor compound combining molybdenum and tungsten with sulfur in a layered crystalline structure. This material belongs to the family of transition metal dichalcogenides (TMDs), which are primarily of research and developmental interest for next-generation electronic and optoelectronic devices. The dual-metal composition modulates electronic bandgap and carrier mobility compared to single-metal alternatives, making it potentially valuable for applications requiring tunable semiconductor properties at the nanoscale.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,425.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,458.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9937 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8850 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data