Mo1 W3 S8

semiconductor

· Mo1 W3 S8

Mo1W3S8 is a mixed-metal dichalcogenide semiconductor compound combining molybdenum and tungsten with sulfur in a layered crystalline structure. This material belongs to the family of transition metal dichalcogenides (TMDs), which are primarily of research and developmental interest for next-generation electronic and optoelectronic devices. The dual-metal composition modulates electronic bandgap and carrier mobility compared to single-metal alternatives, making it potentially valuable for applications requiring tunable semiconductor properties at the nanoscale.

2D semiconductor researchphotodetectors and photovoltaicsfield-effect transistorsheterostructure engineeringenergy storage electrodesoptical sensing applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	6,425.2	ksi	—
Shear Modulus(G)	4,458.5	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9937	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8850	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo1 W3 S8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control