Mo1W2Se6 is a layered transition metal dichalcogenide (TMD) semiconductor compound combining molybdenum, tungsten, and selenium. This is primarily a research and emerging material studied for its tunable electronic and optical properties, positioned within the broader family of 2D materials that show potential for next-generation electronics and photonics. The mixed-metal composition offers opportunities to engineer bandgap and carrier mobility compared to single-metal dichalcogenides, making it a candidate for flexible electronics, photodetectors, and catalytic applications where synthetic tunability is valued.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,871.7 | ksi | — | ||
Shear Modulus(G) | 3,564 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5600 | eV/atom | — |