Mo1W2Se2S4 is a mixed-metal chalcogenide semiconductor compound combining molybdenum, tungsten, selenium, and sulfur in a layered structure. This material belongs to the family of transition-metal dichalcogenides and related mixed-metal variants, primarily of research and development interest for next-generation optoelectronic and energy-storage applications. The combination of multiple metal centers and chalcogen species offers tunable electronic properties and potential advantages in catalytic activity and charge transport compared to binary dichalcogenides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.40 | GPa | — | ||
Shear Modulus(G) | -11.24 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7479 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7830 | eV/atom | — |