Mo1 W2 S6

semiconductor

· Mo1 W2 S6

Mo1W2S6 is a mixed-metal dichalcogenide semiconductor compound combining molybdenum and tungsten with sulfur in a layered crystal structure. This material belongs to the transition metal dichalcogenide (TMD) family and is primarily of research interest for its tunable electronic and optical properties that arise from the heteroatom composition. Industrial applications remain emerging, with potential use in two-dimensional electronics, optoelectronics, and catalytic systems where the Mo-W combination may offer advantages over single-metal TMDs like MoS2 or WS2 for band gap engineering and charge carrier dynamics.

two-dimensional semiconductorsoptoelectronic devicesheterojunction electronicscatalytic surfacesphotovoltaic researchfield-effect transistors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9098	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8910	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo1 W2 S6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control