Mo1W1Se2S2 is a mixed-metal dichalcogenide semiconductor, a layered compound combining molybdenum and tungsten with selenium and sulfur. This represents an experimental alloying strategy within the transition metal dichalcogenide (TMD) family, designed to engineer electronic and optical properties beyond single-component materials like MoS₂ or WSe₂. The mixed composition allows tuning of band gap, carrier mobility, and light absorption characteristics, making it relevant for next-generation optoelectronic and energy conversion devices where conventional bulk semiconductors or single-element TMDs show limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.47 | GPa | — | ||
Shear Modulus(G) | 44.44 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5842 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7650 | eV/atom | — |