MnZnSe₂ is a ternary compound semiconductor composed of manganese, zinc, and selenium elements, belonging to the chalcogenide material family. While not a widely commercialized engineering material, it represents a research-phase compound with potential applications in optoelectronic and photovoltaic devices where tunable bandgap and magnetic properties are advantageous. This material family is investigated for specialized applications requiring combined semiconducting and magnetic functionality, though conventional alternatives (binary selenides, established II-VI semiconductors) remain dominant in production applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.61 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 18.07 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.738 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3010 | eV | — | ||
Magnetic Moment(μB) | 4.991 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04470 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4888 | eV/atom | — |