MnTe is a binary semiconductor compound composed of manganese and tellurium, belonging to the II-VI semiconductor family with a zinc blende crystal structure. It has been studied primarily in research contexts for potential optoelectronic and spintronic applications, where its magnetic and semiconducting properties could enable devices combining optical and magnetic functionality. While not yet widely commercialized, MnTe represents an important material system for exploring dilute magnetic semiconductors and represents an alternative to more established II-VI compounds when magnetic response is a design requirement.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.00 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 31.24 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.393 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.350 | eV | — | ||
| ↳ | 0.000 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1995 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5659 | eV/atom | — | ||
| ↳ | 0.05856 | eV/atom | — |