MnIn2S4 is a ternary metal sulfide compound combining manganese and indium in a fixed stoichiometric ratio, belonging to the family of thiospinel and chalcogenide semiconductors. While primarily a research material rather than a production commodity, this compound is investigated for optoelectronic and photovoltaic applications where its bandgap and crystal structure offer potential advantages in solar cells, photodetectors, and semiconductor devices. Engineers and researchers consider MnIn2S4 when exploring alternatives to more conventional sulfide semiconductors, particularly in applications requiring specific optical properties or when cost and scarcity constraints on indium can be offset by functional benefits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,170 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 3,962.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1587 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8010 | eV | — | ||
Magnetic Moment(μB) | 10.00 | µB | — | ||
Seebeck Coefficient(S) | -202 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6259 | eV/atom | — |