MnHfO3 — Properties & Data | MatWorld

MnHfO3

semiconductor

· MnHfO3

MnHfO3 is a ternary oxide ceramic compound combining manganese and hafnium in a perovskite or related oxide structure. This material is primarily investigated in research settings for its potential in high-temperature electronics, ferroelectric applications, and advanced dielectric systems, where the combined properties of manganese and hafnium oxides may offer advantages in thermal stability or functional performance compared to simpler binary oxide alternatives.

high-temperature ceramicsferroelectric devicesdielectric thin filmsadvanced semiconductor researchthermal barrier coatingsoxide electronics

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.348	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)2 entries	1.000	μB	DFT
↳	5.000	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-3.093	eV/atom	DFT
↳	0.1800	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MnHfO3

Electrical Properties

Other Properties

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Environmental

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