MnGa2S4 is a ternary sulfide compound combining manganese and gallium—a material class primarily studied in solid-state chemistry and materials research rather than established in high-volume industrial production. This compound belongs to the family of transition metal chalcogenides, which are investigated for semiconducting, optoelectronic, and magnetic properties; it is not a conventional alloy but rather an intermetallic sulfide with potential applications in emerging thin-film technologies. While not yet commonplace in production engineering, materials in this family are of interest to researchers exploring alternatives to conventional semiconductors and magnetic materials, particularly where layered or nanostructured phases might offer advantages in electronic or photonic device performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,726.1 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,279.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1275 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.032 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.13 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 61.23 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 1.907 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.573 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 5.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.6075 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000695 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00124 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -176.7 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 303.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7068 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data