MnCdGa4Se8 is a quaternary compound semiconductor belonging to the cadmium chalcogenide family, combining manganese, cadmium, gallium, and selenium elements. This material is primarily of research interest rather than established industrial production, investigated for potential applications in optoelectronic devices and photovoltaic systems where its semiconductor bandgap properties and crystal structure may offer performance advantages. The inclusion of manganese provides opportunities for spin-dependent electronic behavior, making it relevant to emerging fields such as spintronics and magnetic semiconductor research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,552 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 3,111.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1793 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8380 | eV | — | ||
Magnetic Moment(μB) | 5.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5855 | eV/atom | — |