Mn₆Te₂O₁₆ is a mixed-valence manganese tellurate ceramic compound that functions as a semiconductor material, combining manganese and tellurium oxides in a complex layered structure. This material is primarily investigated in research contexts for applications requiring controlled electronic conductivity and redox activity, particularly in energy storage systems, catalysis, and solid-state electronics where the variable oxidation states of manganese provide tunability. Compared to simpler binary oxides, this ternary compound offers potentially enhanced electrochemical performance and thermal stability, though it remains largely in the experimental phase with limited commercial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00610 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.548 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data