Mn₆O₂F₁₀ is a manganese oxide fluoride compound functioning as a semiconductor, representing an emerging class of mixed-anion materials that combine oxide and fluoride chemistry. This material remains primarily in research and development stages, with potential applications in solid-state ionics, energy storage, and advanced electronic devices where the fluoride component can enhance ion conductivity or modify electronic band structure compared to conventional oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,820.4 | ksi | — | ||
Shear Modulus(G) | 5,654.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.297 | eV/atom | — |