Mn5 O3 F5
semiconductorMn₅O₃F₅ is an experimental mixed-valence manganese oxide fluoride compound belonging to the metal oxide-fluoride family of semiconductors, where fluorine substitution modifies the electronic and structural properties of the manganese oxide lattice. This material is primarily of research interest for energy storage, catalysis, and functional ceramic applications, where the combination of manganese redox activity and fluorine's high electronegativity can enable novel ionic transport or electron transfer pathways compared to pure oxide analogues. The material family shows promise in emerging technologies requiring tunable band gaps and enhanced electrochemical activity, though industrial-scale production and deployment remain limited to laboratory and prototype stages.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |