Mn₄Bi₃N₁O₁₅ is a complex mixed-valence oxide-nitride semiconductor containing manganese, bismuth, nitrogen, and oxygen. This is a research-phase compound within the family of multinary transition metal oxides and nitrides, which are being explored for their potential electronic, magnetic, or photocatalytic properties that differ from simpler binary or ternary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.489 | eV/atom | — |