Mn3RhN is an experimental intermetallic nitride semiconductor compound combining manganese, rhodium, and nitrogen. This material belongs to the perovskite-related nitride family and is primarily investigated in research settings for its potential electronic and magnetic properties that could enable next-generation spintronic and photovoltaic devices. The combination of transition metals with nitrogen offers tunable band structures and possible ferromagnetic characteristics that make it of interest for advanced semiconductor applications where traditional silicon-based materials reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,213.2 | ksi | — | ||
Shear Modulus(G) | 2,021.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.913 | eV/atom | — |