Mn₃Ni₃As₃ is an intermetallic semiconductor compound combining manganese, nickel, and arsenic in a 1:1:1 stoichiometry. This is a research-stage material studied primarily for its electronic and magnetic properties rather than established industrial production; it belongs to the family of ternary pnictide semiconductors that show promise for spintronic and thermoelectric applications. The material's notable characteristics stem from the interaction between transition metal d-orbitals and arsenic p-orbitals, making it of interest in fundamental materials research and emerging device concepts where conventional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,538.3 | ksi | — | ||
Shear Modulus(G) | 6,660.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1660 | eV/atom | — |