Mn3 Ir1 N1

semiconductor
· Mn3 Ir1 N1

Mn₃IrN is an intermetallic nitride compound belonging to the family of transition metal nitrides, synthesized as a semiconductor material primarily through computational materials discovery and experimental thin-film research. This material exists mainly in the academic and research domain, where it is being investigated for potential applications in spintronics, magnetic devices, and high-performance electronic applications that exploit the electronic and magnetic properties arising from the combination of manganese and iridium. The compound represents part of the broader exploration into Heusler-like and antiperovskite nitride structures, where such combinations of transition metals with nitrogen are studied to develop new semiconductors with tunable magnetic and electronic properties distinct from conventional alternatives.

spintronics researchmagnetic semiconductor devicesthin-film electronicscomputational materials discoveryhigh-entropy nitride compoundsnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
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Shear Modulus(G)
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Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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Verified Unverified Low confidence (<80%) Link to source
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Formation Energy(ΔHf)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.