Mn3 Ga1 N1

semiconductor

· Mn3 Ga1 N1

Mn₃GaN is an experimental intermetallic semiconductor compound combining manganese, gallium, and nitrogen, belonging to the family of ternary nitride semiconductors with potential for next-generation electronic and spintronic devices. While not yet in mainstream industrial production, this material is of research interest for applications requiring wide bandgap semiconductors or magnetic functionality, potentially offering advantages in high-temperature electronics, power devices, or magnetoelectronic applications where conventional semiconductors reach their limits.

research semiconductorswide-bandgap electronicsspintronic deviceshigh-temperature power electronicsemerging materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	227.4	GPa	—
Shear Modulus(G)	130.4	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn3 Ga1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control