Mn₃GaC is an experimental intermetallic semiconductor compound combining manganese, gallium, and carbon in a ternary phase. This material belongs to the family of transition-metal-based semiconductors and is primarily of research interest for its potential in spintronics, magnetic devices, and high-temperature electronic applications where conventional semiconductors face limitations. The compound's notable characteristics stem from its metallic bonding combined with semiconducting behavior, making it a candidate for next-generation devices that require thermal stability or magnetic functionality beyond what traditional Si or III-V semiconductors offer.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,667.7 | ksi | — | ||
Shear Modulus(G) | 1,694 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01010 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.984 | eV/atom | — |